SILICON CARBIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME

摘要

A first principal surface (P1) of a silicon carbide substrate (10) comprises a flat-topped surface (FT) positioned on the element part (CL), and a sidewall surface (ST) positioned on the trailer part (TM). A doped region (11) of the silicon carbide substrate (10) has parts which are positioned both on the flat-topped surface (FT) of a first principal surface (P1) and on the second principal surface (P2). A Shottky electrode (31) is connected to a doped layer (11) on the flat-topped surface (FT). An opposing electrode (42) is connected to the doped layer (11) on the second principal surface (P2). An insulating film (21) covers a sidewall surtface (ST). The sidewall surface (ST) is inclined at an angle of 50° to 80° with respect to the {000-1} plane. As a result of this configuration, the leak current of the silicon carbide semiconductor device (101) is suppressed.