| 发明名称 |
PHASE CHANGE MEMORY |
| 摘要 |
A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including to repeatedly formed layers of Sb2Te3 and GeTe. The phase change memory layer having the superlattice structure includes a Sb2Te3 layer containing Zr in contact with the first electrode. |
| 申请公布号 |
US2014151622(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201314091487 |
申请日期 |
2013.11.27 |
| 申请人 |
Hitachi, Ltd. |
发明人 |
Oyanagi Takasumi;Takaura Norikatsu;Tai Mitsuharu;Kinoshita Masaharu;Morikawa Takahiro;Akita Kenichi;Kitamura Masahito |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A phase change memory comprising:
a substrate having a semiconductor device and an insulating film on a surface of the substrate; a first electrode provided on the substrate; a second electrode provided on the first electrode; and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including repeatedly formed layers of Sb2Te3 and GeTe, wherein the phase change memory layer having the superlattice structure is in contact with the first electrode and includes the Sb2Te3 layers containing Zr.
|
| 地址 |
Tokyo JP |
