发明名称 WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY ADHERING MATERIAL FOR PROCESSING WAFER, AND MANUFACTURING METHOD OF THIN WAFER
摘要 A wafer processing laminate, a wafer processing member, a temporary adhering material for processing a wafer, and a method for manufacturing a thin wafer, which facilitates to establish a temporary adhering the wafer and the support, enables to form a layer of uniform thickness on a heavily stepped substrate, and is compatible with the TSV formation and wafer back surface interconnect forming steps, and the wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed, wherein the temporary adhesive material layer includes a three-layered structure composite temporary adhesive material layer.
申请公布号 US2014154868(A1) 申请公布日期 2014.06.05
申请号 US201314060234 申请日期 2013.10.22
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 SUGO Michihiro;KATO Hideto;TAGAMI Shohei;YASUDA Hiroyuki;TANABE Masahito
分类号 H01L21/683;H01L21/78 主分类号 H01L21/683
代理机构 代理人
主权项 1. A wafer processing laminate comprising a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed, wherein the temporary adhesive material layer comprises a three-layered structure composite temporary adhesive material layer comprising a first temporary adhesive layer of a non-silicone thermoplastic resin layer (A) releasably adhered on a surface of the wafer, a second temporary adhesive layer of a thermoplastic siloxane resin polymer layer (B) laminated on the first temporary adhesive layer, and a third temporary adhesive layer of a thermosetting siloxane-modified polymer layer (C) laminated on the second temporary adhesive layer and releasably adhered to the support.
地址 Tokyo JP