CRACK STOP STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in the form of a grid to form a crack stop structure.

主权项

1. A method for forming a crack stop structure in a scribe line, comprising:
providing a substrate comprising a scribe line region and a circuit region; forming an integrated circuit within said circuit region; forming a first layer embedded in said substrate, wherein said first layer is partially disposed within said scribe line region; forming an interlayer dielectric layer disposed on said substrate and covering said integrated circuit and said first layer; forming a second layer embedded in said interlayer dielectric layer, wherein said second layer is partially disposed within said scribe line region; forming an intermetal dielectric layer disposed on said interlayer dielectric layer and covering said second layer; removing said interlayer dielectric layer and said intermetal dielectric layer which are disposed within said scribe line region to form a crack stop trench; and filling said crack stop trench with a dielectric material to form a crack stop structure.