发明名称 |
METHOD FOR PURIFYING RESIN FOR PHOTOLITHOGRAPHY |
摘要 |
Provided is a method for purifying a resin for photolithography wherein, from an insufficiently purified resin (also referred to as “crude resin”), low molecular weight impurities such as an unreacted monomer and a polymerization initiator, which cause a development defect of a resist pattern or deterioration of the storage stability of the resin for photolithography can be removed more effectively. A method for purifying a resin for photolithography according to the present invention is characterized by comprising: an operation (a): an operation wherein a slurry in which a resin is dispersed in a solution containing a good solvent and a poor solvent is stirred; and then, an operation (b): an operation wherein, to said slurry, a poor solvent is added to lower the ratio of the good solvent to the poor solvent, and then, the resin is separated from the solution. |
申请公布号 |
US2014155564(A1) |
申请公布日期 |
2014.06.05 |
申请号 |
US201314071977 |
申请日期 |
2013.11.05 |
申请人 |
Maruzen Petrochemical Co., Ltd. |
发明人 |
OIKAWA Tomo |
分类号 |
C08F220/10 |
主分类号 |
C08F220/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method for purifying a resin for photolithography, the method comprising:
an operation (a): an operation wherein a slurry in which a resin is dispersed in a solution containing a good solvent and a poor solvent is stirred, and then, an operation (b): an operation wherein a poor solvent is added to said slurry to lower the ratio of the good solvent to the poor solvent, and then, the resin is separated from the solution.
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地址 |
Tokyo JP |