发明名称 METHOD FOR PURIFYING RESIN FOR PHOTOLITHOGRAPHY
摘要 Provided is a method for purifying a resin for photolithography wherein, from an insufficiently purified resin (also referred to as “crude resin”), low molecular weight impurities such as an unreacted monomer and a polymerization initiator, which cause a development defect of a resist pattern or deterioration of the storage stability of the resin for photolithography can be removed more effectively. A method for purifying a resin for photolithography according to the present invention is characterized by comprising: an operation (a): an operation wherein a slurry in which a resin is dispersed in a solution containing a good solvent and a poor solvent is stirred; and then, an operation (b): an operation wherein, to said slurry, a poor solvent is added to lower the ratio of the good solvent to the poor solvent, and then, the resin is separated from the solution.
申请公布号 US2014155564(A1) 申请公布日期 2014.06.05
申请号 US201314071977 申请日期 2013.11.05
申请人 Maruzen Petrochemical Co., Ltd. 发明人 OIKAWA Tomo
分类号 C08F220/10 主分类号 C08F220/10
代理机构 代理人
主权项 1. A method for purifying a resin for photolithography, the method comprising: an operation (a): an operation wherein a slurry in which a resin is dispersed in a solution containing a good solvent and a poor solvent is stirred, and then, an operation (b): an operation wherein a poor solvent is added to said slurry to lower the ratio of the good solvent to the poor solvent, and then, the resin is separated from the solution.
地址 Tokyo JP