发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a protective Zener diode which is formed via an insulation film on a semiconductor substrate where a switching element is formed and which has less occupied area and less dynamic resistance.SOLUTION: A semiconductor device 100 having a protective Zener diode 33 having less occupied area and less dynamic resistance can be provided by repeating a plurality of unit devices 33a each having a p(74)/n(75)/n(76) structure. |
申请公布号 |
JP2014103216(A) |
申请公布日期 |
2014.06.05 |
申请号 |
JP20120253527 |
申请日期 |
2012.11.19 |
申请人 |
FUJI ELECTRIC CO LTD |
发明人 |
YAMADA KAZUTO;MIYAZAWA SHIGEMI |
分类号 |
H01L21/329;H01L21/822;H01L27/04;H01L29/739;H01L29/78;H01L29/861;H01L29/866;H01L29/868 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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