发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device including a protective Zener diode which is formed via an insulation film on a semiconductor substrate where a switching element is formed and which has less occupied area and less dynamic resistance.SOLUTION: A semiconductor device 100 having a protective Zener diode 33 having less occupied area and less dynamic resistance can be provided by repeating a plurality of unit devices 33a each having a p(74)/n(75)/n(76) structure.
申请公布号 JP2014103216(A) 申请公布日期 2014.06.05
申请号 JP20120253527 申请日期 2012.11.19
申请人 FUJI ELECTRIC CO LTD 发明人 YAMADA KAZUTO;MIYAZAWA SHIGEMI
分类号 H01L21/329;H01L21/822;H01L27/04;H01L29/739;H01L29/78;H01L29/861;H01L29/866;H01L29/868 主分类号 H01L21/329
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