| 发明名称 |
SHIELDING SILICON FROM EXTERNAL RF INTERFERENCE |
| 摘要 |
Consistent with an example embodiment, there is an integrated circuit device (IC) built on a substrate of a thickness. The IC comprises an active device region of a shape, the active device region having a topside and an underside. Through silicon vias (TSVs) surround the active device region, the TSVs having a depth defined by the substrate thickness. On the underside of and having the shape of the active device region, is an insulating layer. A thin-film conductive shield is on the insulating layer, the conductive shield is in electrical contact with the TSVs. |
| 申请公布号 |
US2014151846(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201213693857 |
申请日期 |
2012.12.04 |
| 申请人 |
NXP B. V. |
发明人 |
Phua Chee Keong |
| 分类号 |
H01L23/60;H01L21/78;H01L21/768 |
主分类号 |
H01L23/60 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. An integrated circuit device (IC) built on a substrate of a thickness, the IC comprising:
an active device region of a shape, the active device region having a topside and an underside; through silicon vias (TSVs) surrounding the active device region, the TSVs having a depth defined by the substrate thickness; an insulating layer on the underside of and having the shape of the active device region; a thin-film conductive shield on the insulating layer, the conductive shield in electrical contact with the TSVs; and wherein the TSVs are apportioned into a first group of TSVs and an additional group of TSVs.
|
| 地址 |
Eindhoven NL |
