发明名称 |
NOR FLASH DEVICE MANUFACTURING METHOD |
摘要 |
An embodiment of a NOR Flash device manufacturing method is disclosed, which includes: providing a substrate having a first polycrystalline silicon layer disposed thereon; forming a first hard mask layer on the first polycrystalline silicon layer; etching the first hard mask layer to form a first opening, and cleaning a gas pipeline connected to an etching cavity before etching the first hard mask layer; forming a second hard mask layer on the first hard mask layer, and the second hard mask layer covers the bottom and side wall of the first opening; etching the second hard mask layer to form a second opening, the width of the second opening is smaller than the width of the first opening; etching the first polycrystalline silicon, forming a floating gate. The NOR Flash device manufacturing method of the present invention improves the yield of the NOR Flash device. |
申请公布号 |
US2014154878(A1) |
申请公布日期 |
2014.06.05 |
申请号 |
US201214130460 |
申请日期 |
2012.07.31 |
申请人 |
Chen Yawei;Jian Zhihon |
发明人 |
Chen Yawei;Jian Zhihon |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a NOR Flash device, comprising:
providing a substrate having a first polycrystalline silicon layer disposed thereon; forming a first hard mask layer on the first polycrystalline silicon layer; etching the first hard mask layer to form a first opening using a dry etching process, and cleaning a gas pipeline connected to an etching cavity prior to etching the first hard mask layer; forming a second hard mask layer on the first hard mask layer, wherein the second hard mask layer covers a bottom and a side wall of the first opening; etching the second hard mask layer to form a second opening using a self-aligning process, wherein a width of the second opening is smaller than a width of the first opening; and etching the first polycrystalline silicon layer to form a floating gate using the self-aligning process.
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地址 |
Jiangsu CN |