| 发明名称 |
METHOD FOR FABRICATING A LIGHT EMITTING DIODE (LED) DIE HAVING PROTECTIVE SUBSTRATE |
| 摘要 |
A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure. |
| 申请公布号 |
US2014151635(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201414175033 |
申请日期 |
2014.02.07 |
| 申请人 |
SemiLEDS Optoelectronics Co., Ltd. |
发明人 |
CHU JIUNN-YI;Chu Chen-Fu;Cheng Chao-Chen |
| 分类号 |
H01L33/06;H01L33/10;H01L33/32;H01L33/00 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for fabricating a light emitting diode die comprising:
providing a carrier substrate; forming an epitaxial structure on the carrier substrate comprising a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer; forming a plurality of trenches through the epitaxial structure; forming a reflector layer on the second type semiconductor layer; forming a seed layer on the reflector layer and in the trenches; forming a substrate on the seed layer having an area configured to protect the epitaxial structure; and removing the carrier substrate.
|
| 地址 |
Chu-Nan TW |
