发明名称 |
Method and Structure to Improve the Conductivity of Narrow Copper Filled Vias |
摘要 |
Techniques for improving the conductivity of copper (Cu)-filled vias are provided. In one aspect, a method of fabricating a Cu-filled via is provided. The method includes the following steps. A via is etched in a dielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is conformally deposited onto the diffusion barrier. A thin seed Cu layer is deposited on the Ru layer. A first anneal is performed to increase a grain size of the seed Cu layer. The via is filled with additional Cu. A second anneal is performed to increase the grain size of the additional Cu. |
申请公布号 |
US2014151097(A1) |
申请公布日期 |
2014.06.05 |
申请号 |
US201414177530 |
申请日期 |
2014.02.11 |
申请人 |
International Business Machines Corporation |
发明人 |
McFeely Fenton R.;Yang Chih-Chao |
分类号 |
H05K1/09 |
主分类号 |
H05K1/09 |
代理机构 |
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代理人 |
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主权项 |
1. A copper-filled via formed in a dielectric, comprising:
a via; a diffusion barrier lining the via; a thin ruthenium layer disposed conformally on the diffusion barrier; a thin seed copper layer disposed on the ruthenium layer; and additional copper plated onto the thin seed copper layer filling the via to form the copper-filled via, wherein the additional copper has an average cross-sectional grain width of at least 0.5 times a cross-sectional width of the via.
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地址 |
Armonk NY US |