发明名称 STACKABLE HIGH-DENSITY METAL-OXIDE-METAL CAPACITOR WITH MINIMUM TOP PLATE PARASITIC CAPACITANCE
摘要 Disclosed is a system including first and second plurality of conductors (M2...M6) stacked along a first axis on a substrate. The first axis is perpendicular to a plane on which the substrate lies. In the first and second plurality of conductors, each conductor is connected to an adjacent conductor by one or more first vias (V23...V56) arranged along the first axis. The first and second plurality of conductors are arranged in parallel along a second axis perpendicular to the first axis and parallel to the plane on which the substrate lies. The first plurality of conductors respectively lie on a plurality of planes perpendicular to the first axis and parallel to the plane on which the substrate lies. The second plurality of conductors respectively lie on the plurality of planes. Capacitances are formed along the plurality of planes between the first plurality of conductors and the second plurality of conductors.
申请公布号 WO2014085209(A1) 申请公布日期 2014.06.05
申请号 WO2013US71367 申请日期 2013.11.22
申请人 MARVELL WORLD TRADE LTD.;LIN, HUNG SHENG;WANG, XIAOYUE 发明人 LIN, HUNG SHENG;WANG, XIAOYUE
分类号 H01L49/02;H01G4/005;H01G4/10;H01G4/228;H01L23/522 主分类号 H01L49/02
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