| 摘要 |
<p>This semiconductor element has: a second conductivity-type body region in an upper portion of a first silicon carbide semiconductor layer; a first conductivity-type impurity region in an upper portion of the body region; and a first conductivity-type second silicon carbide semiconductor layer that is provided on the first silicon carbide semiconductor layer, said second silicon carbide semiconductor layer being in contact with at least a part of the body region and a part of the impurity region. The body region includes a first body region in contact with the front surface of the first silicon carbide semiconductor layer, and a second body region in contact with the bottom surface of the first body region. An impurity concentration of the first body region is higher than that of the second body region. The second body region is positioned on the inner side of the first body region in a planar view in the direction perpendicular to the main surface of a semiconductor substrate, and at least a part of the second body region is positioned below the impurity region.</p> |
