POWER SEMICONDUCTOR DEVICE

摘要

A power semiconductor device according to an embodiment of the present invention comprises: a second conductive type first junction termination extension (JTE) layer formed to be in contact with one side of a second conductive type well layer; a second conductive type second JTE layer formed on a same line of the second conductive type first JTE layer and to be spaced apart from the second conductive type first JTE layer in the longitudinal direction of a substrate; and a poly silicon layer formed to be in contact with the second conductive type well layer and the second conductive type first JTE layer.