| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminance and high luminous efficiency.SOLUTION: A semiconductor light-emitting element comprises: a first conductivity type first semiconductor layer composed of an AlGaInP semiconductor; an active layer 12 formed on the first semiconductor layer; a second conductivity type second semiconductor layer formed on the active layer; a second conductivity type current diffusion layer which is formed on the second semiconductor layer and composed of Mg-doped GaInP or Mg-doped GaP; a contact layer 15 formed on the current diffusion layer; and a transparent conductor layer 16 formed on the contact layer. The contact layer is composed of carbon-doped GaInP or carbon-doped GaP having a carrier concentration within a range of 1.0×10to 5.0×10cm. |
