发明名称 MAGNETIC TUNNEL JUNCTION DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a system and method of manufacturing and using a magnetic tunnel junction device.SOLUTION: In a particular embodiment, a magnetic tunnel junction device includes a first free layer and a second free layer. The magnetic tunnel junction also includes a spin torque enhancement layer. The magnetic tunnel junction further includes a spacer layer between the first and second free layers that includes a material and has a thickness that substantially inhibits exchange coupling between the first and second free layers. The first and second free layers are magneto-statically coupled.</p>
申请公布号 JP2014103420(A) 申请公布日期 2014.06.05
申请号 JP20140040178 申请日期 2014.03.03
申请人 QUALCOMM INC 发明人 ZHU XIAOCHUN;KANG SEUNG H;XIA LI;LEE KANGHO
分类号 H01L43/08;H01F10/14;H01F10/16;H01F10/30;H01F10/32;H01F41/20;H01L21/8246;H01L27/105;H01L29/82;H01L43/10;H01L43/12 主分类号 H01L43/08
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