发明名称 INDIUM NANOWIRE, INDIUM NANOWIRE DEVICE AND METHOD OF MANUFACTURING INDIUM NANOWIRE
摘要 <p>PROBLEM TO BE SOLVED: To provide an indium nanowire, an indium nanowire device and a method of manufacturing an indium nanowire.SOLUTION: There is provided an indium nanowire including: a substrate; an indium thin film formed on the substrate; an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern; and an indium nanowire vertically protruded from the indium thin film through the through hole.</p>
申请公布号 JP2014101570(A) 申请公布日期 2014.06.05
申请号 JP20130035412 申请日期 2013.02.26
申请人 SAMSUNG ELECTRO-MECHANICS CO LTD 发明人 CHUNG HEE SUK;KIM GYU SEOK;KANG HAN WOOL;LEE KYUNG HO;KIM MI YANG;HAM SUK JIN
分类号 B22F1/00;B22F9/04;B82Y30/00;B82Y40/00 主分类号 B22F1/00
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