发明名称 |
ASYMMETRIC BOTTOM CONTACTED DEVICE |
摘要 |
The invention provides a Bottom Contacted 2D-layer Device (BCD) for the determination of graphene doping and chemical sensing. The device can be made by transfer of high quality CVD grown graphene films onto n- or p-doped silicon substrates yielding Schottky barrier diodes. Exposure to liquids and gases change the charge carrier density in the graphene and as a result the electrical transport of the device is modulated. The changes can be easily detected and interpreted in the doping power of the adsorbent. This principle allows one to create a new type of chemical sensor platform exploiting the monolayer nature of graphene or other carbon material. The device benefits from facile fabrication and the result is a robust device which can investigate surface chemistry on monolayer materials. |
申请公布号 |
US2014151631(A1) |
申请公布日期 |
2014.06.05 |
申请号 |
US201314084959 |
申请日期 |
2013.11.20 |
申请人 |
The Provost, Fellows, Foundation Scholars, And The Other Members Of Board, Of |
发明人 |
Duesberg Georg;Kim Hye-Young |
分类号 |
G01N27/414 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
an electrode; a 2D material layer in lateral contact with the electrode, wherein the charge transport can be measured vertically.
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地址 |
Dublin IE |