发明名称 SECONDARY TREATMENT OF FILMS OF COLLOIDAL QUANTUM DOTS FOR OPTOELECTRONICS AND DEVICES PRODUCED THEREBY
摘要 A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.
申请公布号 US2014150861(A1) 申请公布日期 2014.06.05
申请号 US201414176254 申请日期 2014.02.10
申请人 Alliance for Sustainable Energy, LLC 发明人 SEMONIN Octavi Escala;LUTHER Joseph M.;BEARD Matthew C.;CHEN Hsiang-Yu
分类号 H01L31/0352;H01L31/18 主分类号 H01L31/0352
代理机构 代理人
主权项 1. A method of forming an optoelectronic device comprising: providing a deposition surface; contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid over one or more cycles to form an initial QD film on the deposition surface; and contacting the QD film with a secondary treatment chemical.
地址 Golden CO US