METHOD FOR MANUFACTURING P-TYPE MOSFET

摘要

Provided is a method for manufacturing a p-type MOSFET, comprising that: forming a portion of the MOSFET on a semiconductor substrate (101), which includes source/drain areas (105) in the semiconductor substrate (101), a dummy gate stack layers between the source/drain areas (105) above the semiconductor substrate (101), and a gate spacer (104) surrounding the dummy gate stack layers; removing the dummy gate stack layers of the MOSFET to form a gate opening to expose a surface of the semiconductor substrate (101); forming a interface oxide layer (108) on the exposed surface of the semiconductor substrate; forming a high K gate dielectric (109) on the interface oxide layer (108) inside the gate opening; forming a first metal gate layer (110) on the high K gate dielectric (109); injecting doping ions to the first metal gate layer (110); and annealing to diffuse the doping ions and concentrate the doping ions on a top interface between the high K gate dielectric (109) and the first metal gate layer (110), and on a lower interface between the high K dielectric (109) and the interface oxide layer (108) wherein an electric dipole is produced by interface reactivity.