发明名称 |
ETCHING METHOD AND DEVICE |
摘要 |
<p>An etching method and apparatus for etching a silicon oxide film selectively with respect to a silicon nitride film formed on a substrate are provided. A processing gas containing a plasma excitation gas and a CHF-based gas is introduced into a processing chamber such that a flow rate ratio of the CHF-based gas to the plasma excitation gas is 1/15 or higher. By generating a plasma in the processing chamber, the silicon oxide film is etched selectively with respect to the silicon nitride film formed on the substrate in the processing chamber.</p> |
申请公布号 |
KR20140068118(A) |
申请公布日期 |
2014.06.05 |
申请号 |
KR20147008422 |
申请日期 |
2012.09.25 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SEKINE TAKAYUKI;SASAKI MASARU;MATSUMOTO NAOKI;SHINPUKU EIICHIROU |
分类号 |
H01L21/3065;H01L21/3213;H01L21/768 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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