发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM |
摘要 |
<p>Provided is a substrate processing apparatus. The substrate processing apparatus includes: a process chamber configured to accommodate a substrate; a substrate holding member configured to hold the substrate in the process chamber; a first gas supply system including a first gas supply hole for supplying a first process gas into the process chamber; a second gas supply system including a second gas supply hole for supplying a second process gas into the process chamber; and a catalyst supply system including a catalyst supply hole for supplying a catalyst into the process chamber, wherein an angle between a first imaginary line connecting a center of the substrate holding member and the first gas supply hole and a second imaginary line connecting the center of the substrate holding member and the catalyst supply hole ranges from 63.5 degrees to 296.5 degrees.</p> |
申请公布号 |
KR101403981(B1) |
申请公布日期 |
2014.06.05 |
申请号 |
KR20120152046 |
申请日期 |
2012.12.24 |
申请人 |
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发明人 |
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分类号 |
H01L21/31;H01L21/316;H01L21/318 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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