NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory element having a structure capable of preventing variation of electric characteristics throughout the manufacturing lots.SOLUTION: The nonvolatile semiconductor memory element includes: a first electrode layer 102; a second electrode layer 104; and a resistance change layer 103 that is disposed between the first electrode layer 102 and the second electrode layer 104, the resistance value of which reversibly changes according to the application of electric pulses. The resistance change layer 103 includes: a first resistance change layer 103a of a first metal oxide being in contact with the first electrode layer 102; and plural second resistance change layers 103b of a second metal oxide being in contact with the first resistance change layers 103a, which are insertion layers 113b disposed between plural matrix layers 113a. The oxygen-deficient ratio of the second metal oxide in the insertion layer 113b is larger than the oxygen-deficient ratio of the second metal oxide in the matrix layer 113a; and the oxygen-deficient ratio of the first metal oxide is larger than the oxygen-deficient ratio of the second metal oxide in the matrix layer 113a.