| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a display device which includes a thin-film transistor using an oxide semiconductor as an active layer.SOLUTION: The display device includes a substrate, a thin-film transistor formed on the substrate and provided with an active layer formed of an oxide semiconductor, a passivation layer formed on the thin-film transistor, and a hydrogen blocking film positioned between the active layer and the passivation layer. The hydrogen blocking film contains one selected from the group consisting of aluminum-neodymium (AlNd) oxide, aluminum-nickel-lanthanum (AlNiLa) oxide, aluminum-nickel-germanium-lanthanum (AlNiGeLa) oxide, and aluminum-cobalt-germanium-lanthanum (AlCoGeLa) oxide.</p> |
