TRANSISTORS AND FABRICATION METHOD THEREOF

摘要

A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate, and forming a quantum well layer on the semiconductor substrate. The method also includes forming a potential energy barrier layer on the semiconductor substrate, and forming an isolation structure to isolate different transistor regions. Further, the method includes patterning the transistor region to form trenches by removing portions of the quantum well layer and the potential energy barrier layer corresponding to a source region and a drain region, and filling trenches with a semiconductor material to form a source and a drain. Further, the method also includes forming a gate structure on a portion of the quantum well layer and the potential energy barrier layer corresponding to a gate region.

主权项

1. A method for fabricating a transistor, comprising:
providing a semiconductor substrate; forming a quantum well layer on the semiconductor substrate; forming a potential energy barrier layer on the quantum well layer; forming an isolation structure to isolate different transistor regions; patterning the transistor region to form trenches by removing a portion of the quantum well layer and the potential energy barrier layer corresponding to a source region and a drain region; filling trenches with a semiconductor material to form a source and a drain; and forming a gate structure on a portion of the quantum well layer and the potential energy barrier layer corresponding to a gate region.