METHOD OF COATING QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL, AND QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL

摘要

A coating method for coating a crucible and a quartz crucible for growing a silicon crystal are provided. In the coating method, a bubble-free quartz layer which is 80 μm to 4 mm thick is formed on an inner surface of a crucible for growing a silicon crystal, and the surface of the bubble-free quartz layer is covered with alkaline earth hydroxide, following which heating is performed to a temperature at which the surface becomes devitrified. The surface may be covered by immersing the inner surface in a solution of the alkaline earth hydroxide. The heating may be performed before the crucible for growing silicon crystal is filled with a solid raw material to be melted.

主权项

1. A method of coating, comprising the steps of:
forming a bubble-free quartz layer having a thickness of 80 μm to 4 mm inclusive on an inner surface of a quartz crucible for growing a silicon crystal; covering the surface of the bubble-free quartz layer with alkaline earth hydroxide; and heating the surface to at least a temperature at which the surface becomes devitrified.