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发明名称
Procédé de préparation de dispositifs utilisant des couches de transition entre semiconducteurs des types <<p>> et n
摘要
申请公布号
FR72192(E)
申请公布日期
1960.08.05
申请号
FRD72192D
申请日期
1957.08.22
申请人
COMPAGNIE FRANCAISE THOMSON-HOUSTON
发明人
分类号
H01L21/3063;H01L21/308
主分类号
H01L21/3063
代理机构
代理人
主权项
地址
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