发明名称 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process
摘要 There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multilayer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process.
申请公布号 EP2172808(B1) 申请公布日期 2014.06.04
申请号 EP20090012329 申请日期 2009.09.29
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OGIHARA, TSUTOMU;UEDA, TAKAFUMI;YANO, TOSHIHARU
分类号 G03F7/075;C08L83/04;C09D183/04;G03F7/11 主分类号 G03F7/075
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