发明名称 |
Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process |
摘要 |
There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multilayer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process. |
申请公布号 |
EP2172808(B1) |
申请公布日期 |
2014.06.04 |
申请号 |
EP20090012329 |
申请日期 |
2009.09.29 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA, TSUTOMU;UEDA, TAKAFUMI;YANO, TOSHIHARU |
分类号 |
G03F7/075;C08L83/04;C09D183/04;G03F7/11 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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