| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing easily and at low cost an Si<SB>3</SB>N<SB>4</SB>heteroepitaxial buffer layer having a uniform thickness over a whole surface of a silicon substrate, and being stable in quality. SOLUTION: The silicon substrate is cleaning-processed so as to be capable of being surface reconstructed, then on the cleaning-processed silicon substrate, a dissociated nitrogen atom flux and an excited nitrogen molecule flux generated by RF (high frequency) high brightness (HB) discharge of an inductively coupled plasma system are irradiated to epitaxially grow an Si<SB>3</SB>N<SB>4</SB>single crystal film by a surface interfacial reaction. COPYRIGHT: (C)2011,JPO&INPIT |
