发明名称 Perfectionnements aux dispositifs à semiconducteurs
摘要 928,848. Semi-conductor devices. COMPAGNIE FRANCAISE THOMSON-HOUSTON. Aug. 10, 1960 [Aug. 10, 1959], No. 27714/60. Class 37. In a semi-conductor device, the semi-conductor element is supported on the central branch of a resilient T-shaped member, the lateral arms of which are bent and resiliently urged against the walls of the casing. Fig. 4 shows the sheet metal in its T-shaped unbent form, and Figs. 2 and 3 the elevation and plan views respectively of the final shape. A transistor 10 in Fig. 2 is shown soldered to the branch 4 of the metal sheet, the emitter electrode 11 passing through orifice 8. The lateral portions 5 and 6 are bent in the form of an S so that when the transistor and support are placed in a glass envelope 28 (Fig. 6), the portions 5 and 6 resiliently engage the inside surface. The branch 4 is secured to a conductor 24 which extends through the base of the envelope, which also contains a desiccant capsule 29. The T-piece has an irregular shaped portion 18 on lateral branch 5 to facilitate positioning of the holder in the envelope. An alternative shape is described (Figs. 7 and 8, not shown) in which the branch 4 is bent horizontally, and the two lateral members form a C rather than an S. The elements may be formed from a continuous sheet of metal consisting of a plurality of apertured T-shapes in continuous series. The lateral resilient portions assist in cooling the device by providing direct contact to the glass envelope. If a diode device is employed, this may be soldered direct to the branch 4 without having orifice 8.
申请公布号 FR1241796(A) 申请公布日期 1960.09.23
申请号 FR19590802482 申请日期 1959.08.10
申请人 COMPAGNIE FRANCAISE THOMSON-HOUSTON 发明人
分类号 H01L23/04;H01L23/16;H01L23/42 主分类号 H01L23/04
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