Semiconductor device including gate drivers around a periphery thereof

摘要

A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die (1105) formed with a plurality of laterally diffused metal oxide semiconductor ("LDMOS") cells, and a metallic layer (1130) electrically coupled to the plurality of LDMOS cells. The semiconductor device also includes a plurality of gate drivers (1191, 1192) positioned along a periphery of the semiconductor die (1105) and electrically coupled to gates of the plurality of LDMOS cells through the metallic layer (1130).