Aluminium bonding wire, connection structure, semiconductor device and manufacturing method of same

摘要

The generation and propagation of cracks in a connection to a connected member is prevented. A semiconductor device is provided with a connection structure 15 between a bonding wire 17 consisting of an aluminum alloy which contains at least magnesium and silicon and in which a total of contents of the magnesium and the silicon is not less than 0.03 wt% but not more than 0.3 wt% and a silicon chip 16 to which this bonding wire 17 is connected. An aluminum-silicon film 16a is formed on the surface of the silicon chip 16. This connection structure 15 has a compound 18 containing magnesium and silicon in a matrix layer 17a constituting the bonding wire 17, in a fine grain layer 17b of the aluminum alloy formed between the matrix layer 17a and the aluminum-silicon film 16a, and at an interface between the matrix layer 17a and the fine grain layer 17b.