发明名称 |
QUANTITATIVE MEASUREMENT OF GAS PHASE PROCESS INTERMEDIATES USING RAMAN SPECTROSCOPY |
摘要 |
<p>A method for quantitatively monitoring gas phase materials in a chemical process is provided and includes, providing a gaseous feed stream containing one or more reactant gases of interest; exposing the gaseous feed stream to coherent radiation from a Raman spectroscopic device; acquiring a Raman spectroscopic signal from each of the gaseous components in the feed stream; analyzing the spectroscopic signal to determine the presence and concentration of each of the gaseous components; and displaying the results of the analysis. In one embodiment, the method is useful for quantitatively monitoring gas phase materials in a process for making high purity silicon.</p> |
申请公布号 |
EP2433113(B1) |
申请公布日期 |
2014.06.04 |
申请号 |
EP20100720326 |
申请日期 |
2010.05.11 |
申请人 |
DOW CORNING CORPORATION;HEMLOCK SEMICONDUCTOR CORPORATION |
发明人 |
HARMS, GREG;KRESZOWSKI, DOUGLAS;LICHT, DAVID;LIPP, ELMER;MOLNAR, MIKE;PINET, MARC |
分类号 |
C01B33/027;G01N21/27;G01N21/65 |
主分类号 |
C01B33/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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