| 摘要 |
PROBLEM TO BE SOLVED: To provide a new semiconductor device using an oxide semiconductor. SOLUTION: The semiconductor device includes: a substrate (for example, a substrate having an insulating surface); a first electrode layer on the substrate; an oxide semiconductor layer partially existing on the first electrode; a gate insulating later covering a side surface of the oxide semiconductor layer; a second electrode layer electrically connected to the oxide semiconductor layer in an opening of the gate insulating layer; and a third electrode layer for applying a voltage to the side surface of the oxide semiconductor layer via the gate insulating layer. COPYRIGHT: (C)2010,JPO&INPIT |
