发明名称 |
METHOD FOR MANUFACTURING SOI WAFER |
摘要 |
The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method. |
申请公布号 |
EP2657955(A4) |
申请公布日期 |
2014.06.04 |
申请号 |
EP20110850322 |
申请日期 |
2011.11.18 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
AGA, HIROJI;YOKOKAWA, ISAO;OKA, SATOSHI |
分类号 |
H01L21/02;H01L21/311;H01L21/762;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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