发明名称 |
POLYSILICON RECEPTACLE |
摘要 |
<p>To provide a polysilicon receptacle arranged at the lower part of a silicon melt-depositing reactor and receives the polysilicon therein without degenerating the surfaces of the polysilicon. The receptacle 15 is arranged at the lower part of the silicon melt-depositing reactor 1 to receive the polysilicon that melt-drips from the inner surface of the reactor 1. A surface-treating layer is formed on at least the inner surface of the receptacle 15 to prevent absorption or release of water content.</p> |
申请公布号 |
EP2738141(A1) |
申请公布日期 |
2014.06.04 |
申请号 |
EP20120818442 |
申请日期 |
2012.07.11 |
申请人 |
TOKUYAMA CORPORATION |
发明人 |
SAKIDA, MANABU;KAWAI, HIDEAKI;WAKAMATSU, SATORU |
分类号 |
C01B33/02;B01J19/02;C01B31/36;C01B33/027;C01B33/03;C30B29/06;C30B35/00 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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