发明名称
摘要 <p>A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5μm or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture.</p>
申请公布号 JP5510766(B2) 申请公布日期 2014.06.04
申请号 JP20080159008 申请日期 2008.06.18
申请人 发明人
分类号 C23C14/32;B32B9/00;C04B35/14;C23C14/08 主分类号 C23C14/32
代理机构 代理人
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