发明名称 |
Method of manufacturing semiconductor device including first conductive pattern and second conductive pattern having top surface which decreases in height |
摘要 |
A semiconductor device has a semiconductor substrate, a plurality of first conductive patterns, a second conductive pattern having a top surface of which stepwisely or gradually decreases in height in a direction from a side facing the first conductive pattern toward an opposite side, a first insulation film formed over the plurality of first conductive patterns and the second conductive pattern, and a third conductive pattern formed over the first insulation film. |
申请公布号 |
US8741760(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201213494728 |
申请日期 |
2012.06.12 |
申请人 |
Fujitsu Semiconductor Limited |
发明人 |
Kokura Hikaru |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device comprising:
forming a first conductive film over a semiconductor substrate; etching the first conductive film thereby forming a plurality of first conductive patterns provided in a first direction and a second conductive pattern provided in parallel to the plurality of first conductive patterns; covering the whole of each of the plurality of first conductive patterns and a first part of the second conductive pattern closer to the first conductive pattern with a first mask pattern, while exposing a second part of the second conductive pattern further from the first conductive pattern; etching the second conductive pattern in a thickness direction with the first mask pattern as a mask so as not to etch the plurality of first conductive patterns and the first part of the second conductive pattern; forming a first insulation film over the plurality of first conductive patterns and the second conductive pattern; and forming a third conductive film over the first insulation film.
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地址 |
Yokohama JP |