发明名称 Memory with temperature compensation
摘要 A memory element in which the temperature coefficient of a memory cell substantially matches the temperature coefficient of a reference cell and tuning either the temperature coefficient of a memory cell to substantially match the temperature coefficient of the reference cell provides for improved precision of sensing or reading memory element states, particularly so as to minimize the affect of temperature variations on reading and sensing states.
申请公布号 US8743641(B2) 申请公布日期 2014.06.03
申请号 US201113227249 申请日期 2011.09.07
申请人 Macronix International Co., Ltd. 发明人 Chen Chung-Kuang;Chen Han-Sung;Hung Chun-Hsiung
分类号 G11C7/04 主分类号 G11C7/04
代理机构 代理人
主权项 1. A method for tuning the temperature coefficient of a reference cell current of a memory element, the method comprising: providing a memory cell having a temperature coefficient of a memory cell current; providing a reference cell of the memory element having a temperature coefficient of the reference cell current; and tuning the temperature coefficient of the reference cell current of the reference cell to substantially match the temperature coefficient of the memory cell current.
地址 TW