Semiconductor embedded module and method for producing the same

摘要

A semiconductor embedded module 1 of the present invention has a configuration in which a semiconductor device 20, which is an electronic component such as a semiconductor IC (die) in a bare chip state, is embedded in a resin layer 10 (second insulating layer). In the semiconductor device 20, a redistribution layer 22 is connected to land electrodes. A protective layer 24 (first insulating layer) is provided on the redistribution layer 22, and is provided with openings such that external connection pads P of the redistribution layer 22 are exposed. Also, the resin layer 10 is formed to cover the protective layer 24, and vias V are formed at the positions of the respective external connection pads P of the redistribution layer 22. The grinding rate of the resin layer 10 is larger than that of the protective layer 24.

主权项

1. A semiconductor embedded module, comprising:
a semiconductor device which is provided with or connected with a wiring layer; a first insulating layer (1) which is formed of imide resin or a resin composition containing imide resin and (2) which is provided in the periphery of the wiring layer such that an external connection pad of the wiring layer is exposed; a second insulating layer (1) which is formed of epoxy resin or a resin composition containing epoxy resin, (2) which is directly laminated on a first surface of the first insulating layer opposite to a second surface of the first insulating layer provided on the wiring layer, and (3) which has a grinding rate in a blasting treatment larger than that of the first insulating layer; and a via which is opened onto at least a part of the external connection pad and at least a part of the second insulating layer.