Anti-reflection structures for CMOS image sensors

摘要

Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.

主权项

1. A semiconductor structure comprising:
a semiconductor chip; and a package housing encapsulating said semiconductor chip and including an optically transparent window, said optically transparent window comprising a first array of protuberances on a front surface and a second set of protuberances on a back surface.