发明名称 Light-emitting diode with embedded elements
摘要 A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements.
申请公布号 US8742441(B2) 申请公布日期 2014.06.03
申请号 US20090547428 申请日期 2009.08.25
申请人 TSMC Solid State Lighting Ltd. 发明人 Chen Ding-Yuan;Chiou Wen-Chih;Yu Chen-Hua
分类号 H01L29/72 主分类号 H01L29/72
代理机构 代理人
主权项 1. A light-emitting diode (LED) device comprising: a substrate; an LED structure formed over the substrate, the LED structure having a lower LED layer, an active layer, and a first upper LED layer, wherein the first upper LED layer is a doped semiconductor layer; and embedded elements continuously extending at least partially through the first upper LED layer and the active layer of the LED structure, the embedded elements having a refractive index different than the first upper LED layer, wherein the first upper LED layer and the embedded elements have co-planar upper surfaces that are facing the same direction.
地址 HsinChu TW