Pixel structure and manufacturing method thereof

摘要

A pixel structure including a substrate, a color filter layer, a conductive light-shielding layer, a buffer layer, a scan line, a data line, an active device, and a pixel electrode is provided. The substrate has a pixel region. The color filter layer is disposed corresponding to the pixel region. The conductive light-shielding layer is disposed corresponding to the periphery of the pixel region. The buffer layer covers the conductive light-shielding layer and color filter layer. The scan line and the data line are disposed on the buffer layer. The active device is disposed on the buffer layer and electrically connected to the scan line and data line. The pixel electrode is disposed on the buffer layer and electrically connected to the active device, wherein an overlapping area between the pixel electrode and the conductive light-shielding layer constitutes a storage capacitor. A method for manufacturing the pixel structure is also provided.

主权项

1. A pixel structure, comprising:
a substrate, having a pixel region; a color filter layer, disposed above the substrate and corresponding to the pixel region; a scan line and a data line, disposed above the color filter layer; an active device, disposed above the color filter layer and electrically connected to the scan line and the data line; a pixel electrode, disposed above the color filter layer and electrically connected to the active device; a buffer layer, covering the pixel electrode; and a conductive light-shielding layer, disposed above the buffer layer and corresponding to a periphery of the pixel region, wherein an overlapping area between the pixel electrode and the conductive light-shielding layer constitutes a storage capacitor.