发明名称 Thin-film transistor array and image display device in which thin-film transistor array is used
摘要 In a thin-film transistor array according to an embodiment of the present invention, thin-film transistors are disposed in a matrix array, the thin-film transistor including a gate electrode that is formed on a substrate, a gate insulating layer that is formed on the gate electrode, a source electrode that is formed on the gate insulating layer, a pixel electrode that is formed on the gate insulating layer, a drain electrode that is connected to the pixel electrode, and a semiconductor layer that is formed between the source electrode and the drain electrode, the gate electrode is connected to a gate line while the source electrode is connected to a source line, the thin-film transistor is formed within a region of the source line and the thin-film transistor array includes a stripe insulating film such that the source line and the semiconductor layer are covered with the stripe insulating film.
申请公布号 US8742423(B2) 申请公布日期 2014.06.03
申请号 US201113232856 申请日期 2011.09.14
申请人 Toppan Printing Co., Ltd. 发明人 Matsubara Ryohei;Ishizaki Mamoru
分类号 H01L29/04;H01L29/15;H01L27/14;H01L29/423;H01L29/786;H01L29/417;H01L27/12 主分类号 H01L29/04
代理机构 代理人
主权项 1. A thin-film transistor array, wherein a thin-film transistor is disposed in a matrix array, the thin-film transistor including a gate electrode that is formed on a substrate, a gate insulating layer that is formed on the gate electrode, a source electrode that is formed on the gate insulating layer, a pixel electrode that is formed on the gate insulating layer, a drain electrode that is connected to the pixel electrode via a connection electrode, and a semiconductor layer that is formed between the source electrode and the drain electrode, the gate electrode is connected to a gate line while the source electrode is connected to a source line, the thin-film transistor is formed within a region of the source line and the thin-film transistor array includes a stripe insulating film that covers the source line and the semiconductor layer, wherein the source line includes a notch in part thereof, the drain electrode is formed in the notch, and the source line doubles as the source electrode, wherein the drain electrode has a linear shape along a substantial center line in the source line region, the linear shape has a long side and a short side, a direction of the long side is parallel to a direction of the source line, the source line is formed so as to double as the source electrode, and the source electrode has a shape in which the source electrode substantially surrounds the drain electrode, wherein a combined body of the drain electrode and the connection electrode has a T-shape or an L-shape, and wherein four sides of the drain electrode other than a connection part of the drain electrode and the connection electrode are surrounded by the notch of the source line, the four sides including a pair of the long sides and a pair of the short sides.
地址 JP