发明名称 |
Thin-film transistor array and image display device in which thin-film transistor array is used |
摘要 |
In a thin-film transistor array according to an embodiment of the present invention, thin-film transistors are disposed in a matrix array, the thin-film transistor including a gate electrode that is formed on a substrate, a gate insulating layer that is formed on the gate electrode, a source electrode that is formed on the gate insulating layer, a pixel electrode that is formed on the gate insulating layer, a drain electrode that is connected to the pixel electrode, and a semiconductor layer that is formed between the source electrode and the drain electrode, the gate electrode is connected to a gate line while the source electrode is connected to a source line, the thin-film transistor is formed within a region of the source line and the thin-film transistor array includes a stripe insulating film such that the source line and the semiconductor layer are covered with the stripe insulating film. |
申请公布号 |
US8742423(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201113232856 |
申请日期 |
2011.09.14 |
申请人 |
Toppan Printing Co., Ltd. |
发明人 |
Matsubara Ryohei;Ishizaki Mamoru |
分类号 |
H01L29/04;H01L29/15;H01L27/14;H01L29/423;H01L29/786;H01L29/417;H01L27/12 |
主分类号 |
H01L29/04 |
代理机构 |
|
代理人 |
|
主权项 |
1. A thin-film transistor array,
wherein a thin-film transistor is disposed in a matrix array, the thin-film transistor including a gate electrode that is formed on a substrate, a gate insulating layer that is formed on the gate electrode, a source electrode that is formed on the gate insulating layer, a pixel electrode that is formed on the gate insulating layer, a drain electrode that is connected to the pixel electrode via a connection electrode, and a semiconductor layer that is formed between the source electrode and the drain electrode, the gate electrode is connected to a gate line while the source electrode is connected to a source line, the thin-film transistor is formed within a region of the source line and the thin-film transistor array includes a stripe insulating film that covers the source line and the semiconductor layer, wherein the source line includes a notch in part thereof, the drain electrode is formed in the notch, and the source line doubles as the source electrode, wherein the drain electrode has a linear shape along a substantial center line in the source line region, the linear shape has a long side and a short side, a direction of the long side is parallel to a direction of the source line, the source line is formed so as to double as the source electrode, and the source electrode has a shape in which the source electrode substantially surrounds the drain electrode, wherein a combined body of the drain electrode and the connection electrode has a T-shape or an L-shape, and wherein four sides of the drain electrode other than a connection part of the drain electrode and the connection electrode are surrounded by the notch of the source line, the four sides including a pair of the long sides and a pair of the short sides.
|
地址 |
JP |