INDEPENDENT AND SYMMETRIC DOUBLE GATED ELECTRON-HOLE BILAYER TUNNEL FIELD EFFECT TRANSISTOR AND ITS FABRICATION METHOD

摘要

The present invention relates to an electron-hole bilayer tunnel field effect transistor using a symmetrical double gate structure and a manufacturing method of the transistor and, more specifically, to an electron-hole bilayer tunnel field effect transistor using a symmetrical double gate structure and a manufacturing method of the transistor, capable of bringing the improvement of a slope and an increase in an operation current under a threshold voltage by using a double gate p-i-n structure and inter-band tunneling; and being formed in practice by suggesting the symmetrical gate structure.