Memory device having a dielectric containing dysprosium doped hafnium oxide

摘要

The use of a monolayer or partial monolayer sequencing process, such as atomic layer deposition, to form a dielectric layer of hafnium oxide doped with dysprosium and a method of fabricating such a combination produces a reliable structure for use in a variety of electronic devices. The dielectric structure can include hafnium oxide on a substrate surface followed by dysprosium oxide, and repeating to form a thin laminate structure. A dielectric layer of dysprosium doped hafnium oxide may be used as the gate insulator of a MOSFET, as a capacitor dielectric in a DRAM, as a tunnel gate insulator in flash memories, or as a dielectric in NROM devices.

主权项

1. A memory device comprising:
a substrate; a dielectric over the substrate, the dielectric comprising hafnium oxide and dysprosium wherein the dielectric includes a dysprosium oxide layer between a plurality of hafnium oxide layers; and a gate over the dielectric.