Method to grow group III-nitrides on copper using passivation layers

摘要

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

主权项

1. A method to grow a Group III-nitride on a copper substrate, comprising:
providing a copper substrate; growing a passivation layer on the copper substrate; and growing a Group III-nitride epilayer on the passivation layer by metal-organic chemical vapor deposition.