MEMORY DEVICE FOR RESISTANCE-BASED MEMORY APPLICATIONS

摘要

In a particular embodiment, a memory device (100) is disclosed that includes a memory cell (226) including a resistance based memory element (228) coupled to an access transistor (230). The access transistor has a first oxide thickness to enable operation of the memory cell at an operating voltage. The memory device also includes a first amplifier (202) configured to couple the memory cell to a supply voltage (Vamp) that is greater than a voltage limit to generate a data signal based on a current through the memory cell. The first amplifier includes a clamp transistor (216) that has a second oxide thickness that is greater than the first oxide thickness. The clamp transistor is configured to prevent the operating voltage at the memory cell from exceeding the voltage limit.