Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array

摘要

Methods, systems, structures and arrays are disclosed, such as a resistive memory array which includes access devices, for example, back-to-back Zener diodes, that only allow current to pass through a coupled resistive memory cell when a voltage drop applied to the access device is greater than a critical voltage. The array may be biased to reduce standby currents and improve delay times between programming and read operations.

主权项

1. A method comprising:
forming at least one access device, wherein the access device comprises one of back-to-back Zener diodes, a four-layer diode, and a Triac diode, by acts comprising: forming a first conductively-doped region having a first conductivity type over a region of a second conductivity type, changing the conductivity type of a portion of the first conductively-doped region from the first conductivity type to the second conductivity type and a second portion of the first conductivity type where are separated by the portion changed to the second conductivity type; and forming at least one resistive memory cell coupled to said at least one access device.