发明名称 Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
摘要 An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer. An antifuse component can include a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer. The second electrode of the antifuse component can be coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. In an embodiment, the antifuse component can be in the form of a transistor structure. The electronic device can be formed using a single polysilicon process.
申请公布号 US8741697(B2) 申请公布日期 2014.06.03
申请号 US201113232487 申请日期 2011.09.14
申请人 Semiconductor Components Industries, LLC 发明人 Agam Moshe;Yao Thierry Coffi Herve;Liu Shizen Skip
分类号 H01L21/82 主分类号 H01L21/82
代理机构 代理人
主权项 1. A process of forming an electronic device comprising a nonvolatile memory cell comprising: forming a field isolation region over a substrate, wherein the field isolation region defines a first active region, a second active region, and a third active region spaced apart from one another; forming a first gate member over a portion of the first active region; forming a second gate member over portions of the second and third active regions; forming first source/drain regions within other portions of the first and third active regions that are not covered by the first and second gate members; forming second source/drain regions within other portions of the second active region; and forming a first interconnect member that electrically connects a source/drain region within the first active region to the second gate member, wherein an antifuse component of the nonvolatile memory cell includes a portion of the second gate member and the second active region.
地址 Phoenix AZ US