发明名称 |
Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same |
摘要 |
An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer. An antifuse component can include a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer. The second electrode of the antifuse component can be coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. In an embodiment, the antifuse component can be in the form of a transistor structure. The electronic device can be formed using a single polysilicon process. |
申请公布号 |
US8741697(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201113232487 |
申请日期 |
2011.09.14 |
申请人 |
Semiconductor Components Industries, LLC |
发明人 |
Agam Moshe;Yao Thierry Coffi Herve;Liu Shizen Skip |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
1. A process of forming an electronic device comprising a nonvolatile memory cell comprising:
forming a field isolation region over a substrate, wherein the field isolation region defines a first active region, a second active region, and a third active region spaced apart from one another; forming a first gate member over a portion of the first active region; forming a second gate member over portions of the second and third active regions; forming first source/drain regions within other portions of the first and third active regions that are not covered by the first and second gate members; forming second source/drain regions within other portions of the second active region; and forming a first interconnect member that electrically connects a source/drain region within the first active region to the second gate member, wherein an antifuse component of the nonvolatile memory cell includes a portion of the second gate member and the second active region.
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地址 |
Phoenix AZ US |