Nonvolatile memory including plural memory cells stacked on substrate

摘要

According to example embodiments, a nonvolatile memory device includes a memory cell array including a plurality of memory cells stacked on a substrate, a plurality of word lines connected with the memory cell array, a plurality of pass voltage generators, and a voltage control circuit. The pass voltage generators each include a plurality of current paths and are configured to generate pass driving signals applied to unselected word lines of the plurality of word lines. The voltage control circuit is configured to control rising slopes of the pass driving signals generated from the plurality of pass voltage generators, based on adjusting the number of current paths in each pass voltage generator used to generate each driving signal.

主权项

1. A nonvolatile memory device comprising:
a memory cell array including a plurality of memory cells stacked on a substrate; a plurality of word lines connected with the memory cell array; a plurality of pass voltage generators,
the pass voltage generators each including a plurality of current paths, andthe pass voltage generators configured to generate pass driving signals applied to unselected word lines of the plurality of word lines; and a voltage control circuit configured to control rising slopes of the pass driving signals generated from the plurality of pass voltage generators, based on adjusting the number of current paths in each pass voltage generator used to generate each pass driving signal.